NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
100
90
80
10 V
T J = 25 ° C
4.5 V
4.0 V
100
90
80
T J = ? 55 ° C
T J = 25 ° C
70
70
60
3.5 V
60
V DS = 10 V
T J = 125 ° C
50
50
40
30
20
10
3.0 V
V GS = 2.5 V
40
30
20
10
0
0
1
2
3
4
5
0
1
2
3
4
5
0.015
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
0.019
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
I D = 30 A
0.017
0.015
0.013
0.011
0.009
0.007
0.005
T = 25 ° C
V GS = 4.5 V
V GS = 10 V
0.004
3
4
5
6
7
8
9
10
0.003
10
20
30
40
50
60
70
80
90 100
1.7
V GS (V)
Figure 3. On ? Resistance vs. V GS
10,000
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
I D = 30 A
V GS = 10 V
1,000
100
T J = 150 ° C
T J = 125 ° C
T J = 85 ° C
0.7
0.6
? 50
? 25
0
25
50
75
100
125
150
10
5
10
15
20
V GS = 0 V
25
30
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 6. Drain ? to ? Source Leakage Current
vs. Voltage
相关PDF资料
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相关代理商/技术参数
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NTMFS4927NT3G 功能描述:MOSFET TRENCH 3.1 30V 9 Ohm NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMFS4931N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 246 A, Single N.Channel, SO.8 FL
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NTMFS4931NT3G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 246 A, Single N.Channel, SO.8 FL
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NTMFS4933NT3G 功能描述:MOSFET NFET SO8FL 30V 232A 1.5MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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